Authors: B. Yu, H. Lu, W-Y Lu and Y. Taur
Affilation: UCSD, United States
Pages: 532 - 537
Keywords: double-gate mosfet
An analytic charge model for both double-gate (DG) and surrounding-gate (SG) MOSFETs is presented. With only the mobile charge term, Poisson’s equation is rigorous solved and the analytic electrostatic potential is derived. The development of charge model is based on closed-form solution of Poisson's equation, current continuity equation, and Ward-Dutton linear charge partition. The model can continuously cover all the operation regions, i.e., linear, saturation, and subthreshold, with unique analytic expressions. The physics-based nature makes this model free of fitting parameters as well as the charge sheet approximation. It is shown that the C-V characteristics generated by this model agree with two-dimensional numerical simulation results.