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 | Nanotech 2007 Vol. 1
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1
Chapter 3: Nanowires |
| | A unique opportunity for industrial scale fabrication of semiconductor nanowire-based devices | | Authors: | B. Nikoobkht | | Affilation: | National Institute of Standards and Technology, US | | Pages: | 241 - 243 | | Keywords: | nanowire, zinc oxide, nanodevice, directed assembly | | Abstract: | A method is developed which enables horizontal growth of semiconductor nanowires on predefined locations. In this architecture, despite most bottom-up approaches, there is no need for post-growth treatments and alignment of nanowires on a given surface. In the presented method, sapphire substrate is patterned with gold catalyst using photolithography. After growth of nanowires, using a 2nd step of photolithography, electric contacts are placed precisely on nanowires. Using this technique, large scale electrically addressable nanowires and top-gated field effect nanowire transistors have been made and their electric transport properties have been measured. | | ISBN: | 1-4200-6182-8 |
| Pages: | 726 |
| Hardcopy: | $199.99 |
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