Nanoscale Device Modeling and Simulation: Multiple Independent gate Field Effect Transistor
Authors:
H-G Kim
Affilation:
Inha University, KR
Pages:
218 - 221
Keywords:
MIGFET, SCE, Quantum Mechanical
Abstract:
we report our numerical modeling and simulation results for MIGFET. The simulation result revealed that MIGFET demonstrates dynamic modulation of sub-threshold swing and threshold voltage by biasing the second gate. And Short channel effects are appreciably suppressed for MIGFET in terms of DIBL, voltage roll-off.
