Authors: H-G Kim
Affilation: Inha University, Korea
Pages: 218 - 221
Keywords: MIGFET, SCE, Quantum Mechanical
we report our numerical modeling and simulation results for MIGFET. The simulation result revealed that MIGFET demonstrates dynamic modulation of sub-threshold swing and threshold voltage by biasing the second gate. And Short channel effects are appreciably suppressed for MIGFET in terms of DIBL, voltage roll-off.