Authors: S.H. Song, Y. Ding, U. Kortshagen, A. Bapat and S.A. Campbell
Affilation: University of Minnesota, United States
Pages: 201 - 204
Keywords: silicon, nanoparticle, transistor, Schottky
A novel process has been developed by when large (~40 nm) cubic single crystals of silicon can be produced at high rates. In a previous paper we demonstrated that these particles can be used to make discrete silicon transistors on any type of substrate. Here we report at YbSi process that allows us to make n-channel devices as well so that complementary logic can be created. The process uses self aligning to make source, drain, and gate contacts to the 35 nm particle. Transistor results are shown and the current is gate controlled.