Theoretical study of Graphene Nanoribbon Field-Effect Transistors
Authors:
G. Liang, N. Neophytou, D. Nikonov and M. Lundstrom
Affilation:
Purdue Unioversity, US
Pages:
127 - 130
Keywords:
MOSFET, carbon nanoribbon, CNR
Abstract:
In this work, we theoretically studied the electronic structure of CNRs using pz-orbital tight-binding model as well as a simple analytical formula. Moreover, the ballistic performance of CNR MOSFETs using a semi-classical “top-of-the-barrier” MOSFET model is investigated. 5nm wide CNR MOSFETs show comparable performance with 1.6 nm diameter CNT MOSFETs, and outperform silicon MOSFETs by over 100%.
