Authors: M. Chung, C.C. Chang, B.R. Huang, C.S. Fu, Y.Y. Chang, S.W. Lai and J.M. Chiou
Affilation: Southern Taiwan University of Technology, Taiwan
Pages: 9 - 12
Keywords: carbon nanotube, BGA, field emission
Carbon nanotube is the primary field emission source in many applications, but there has been limited report on direct growth of CNT on metal surface with CVD method due to technical difficulties. This research propose the use of BGA balls to bond a CVD grown CNT on Si wafer onto a metal substrate and form a grid array of emission source. Because of the low melting point (185ºC) of the BGA ball and its highly matured low cost production technique and physical properties compatible with the IC packing industry, this method can manufacture very large area of metal-CNT cathode with excellent field emission characteristics. Multiple samples of such cathode show turn on field from 1.05- 1.48 V/µm at 1μA/cm2 current density, and field enhancement factor β ranging from 2500-3200. Optimum bonding time for 63 MPa pressure is around 8 minutes.