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 | Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling |
| | Compact Modeling of Short Channel Double-Gate MOSFETs | | Authors: | H. Lu, X. Liang, W. Wang and Y. Taur | | Affilation: | Univ. California, San Diego, US | | Pages: | 741 - 744 | | Keywords: | double-gate MOSFET, short-channel effects | | Abstract: | This talk presents analytical modeling of short-channel effect in double-gate MOSFETs. 2-D Poisson’s eq. is solved as a boundary value problem in subthreshold. 2-D potential distribution and subthreshold currents have been calculated and verified by 2-D numerical simulation. The extracted threshold roll-off, drain induced barrier lowering, and subthreshold slope as a function of channel length are suitable for implementation in compact models. |  | View paper | | ISBN: | 0-9767985-8-1 |
| Pages: | 913 |
| Hardcopy: | $185.00 |
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