Authors: M. Schröter and H. Tran
Affilation: UCSD, United States
Pages: 735 - 740
Keywords: bipolar transistors, compact modeling, hicum
Various methods for calculating regional charge storage components in bipolar transistors from<br>device simulation results are compared with respect to their usefulness for compact modeling. The<br>methods are evaluated for Si and SiGe transistors with very different doping profiles representing<br>existing process technologies. Causes for the failure of certain methods are discussed. A selected<br>method is then applied to a regional analysis of bias dependent compact model components.