Authors: H-C Wu, S. Mijalkovic and J.N. Burghartz
Affilation: Delft university of technology, Netherlands
Pages: 872 - 875
Keywords: scalable Mextram model, unified parameter extraction, VHDL Verilog-A, SiGe HBT
A unified parameters extraction procedure for temperature and geometry scalable bipolar transistor model Mextram has been demonstrated using an example of high-speed SiGe HBT technology. The essential feature of the proposed methodology is a direct extraction of the scaling parameters from the measured electrical characteristics and the model parameters are extracted only once for a single reference geometry.