Authors: H.G.A. Huizing, D. Tio Castro, J.C.J. Paasschens and M.H.R. Lankhorst
Affilation: Philips, Netherlands
Pages: 860 - 863
Keywords: lumped element model phase change memory
A transient lumped element model for a phase change memory (PCM) cell is developed for use in a circuit simulator. Unlike existing models, this model calculates threshold voltage and off-state resistance drift as found in PCM-cells. After an explanation of the model, simulations results are shown and compared with measurements.