Authors: F.G. Anderson, R.M. Rassel and M.A. Lavoie
Affilation: IBM Microelectronics, United States
Pages: 842 - 845
Keywords: varactor, junction capacitance, modeling
The current standard diode junction capacitance models do not yield high quality models for hyperabrupt junction varactors that are constructed from several implants. We describe a new enhancement that employs the actual (exponential) doping profiles that does yield good fits and physical parameters.