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 | Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling |
| | Compact Modeling of Doped Symmetric DG MOSFETs with Regional Approach | | Authors: | K. Chandrasekaran, Z.M. Zhu, X. Zhou, W. Shangguan, G.H. See, S.B. Chiah, S.C. Rustagi and N. Singh | | Affilation: | Nanyang Technological University, SG | | Pages: | 792 - 795 | | Keywords: | compact modeling, Double gate, Regional aproach | | Abstract: | A compact model for the explicit surface potential equation of doped symmetric double-gate MOSFET from Poisson equation with regional approach is presented. It’s scalable for all doping and channel thicknesses and has been proved to agree numerical results very well. |  | View paper | | ISBN: | 0-9767985-8-1 |
| Pages: | 913 |
| Hardcopy: | $185.00 |
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