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 | Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling |
| | Two-Tone Distortion Modeling for SiGe HBTs Using the High-Current Model | | Authors: | R.R. Malladi, V. Borich, S.L. Sweeney, J. Rascoe, K.M. Newton, S. Venkatadri, J. Yang and S. Chen | | Affilation: | IBM Systems and Technology, US | | Pages: | 765 - 767 | | Keywords: | SiGe, HBT, Hicum, Distortion | | Abstract: | This paper examines certain aspects of the base resistance model of HiCUM (High Current Model) to address convergence problems seen during 2-tone distortion simulations of SiGe HBTs. Here, we propose some changes to the model implementation and incorporate them in ADS simulator. This resulted in excellent agreement between the inter-modulation distortion measurements and the model. | | ISBN: | 0-9767985-8-1 |
| Pages: | 913 |
| Hardcopy: | $185.00 |
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