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 | Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 7: Compact Modeling |
| | DC and AC Symmetry Tests for MOSFET Models | | Authors: | C.C. McAndrew | | Affilation: | Freescale Semiconductor, US | | Pages: | 745 - 748 | | Keywords: | MOSFET modeling, SPICE modeling, MOSFET symmetry | | Abstract: | Symmetry around Vds=0 is a critical requirement for
MOSFET models, e.g. as it affects the ability of a model to
simulate accurately distortion for some RF CMOS mixers.
The Gummel Symmetry Test is, until now, the standard
test used to evaluate the symmetry of MOSFET models.
However, this test is only applicable to DC current,
and is only applicable when there is negligible
gate or substrate current. This paper presents a
modified DC symmetry test that is applicable in the
presence of gate and substrate currents, and a new
AC symmetry test that is simple and effective in
verifying symmetry of gate to source and drain capacitance.
It is easily extensible to test other capacitance coefficient
symmetries. |  | View paper | | ISBN: | 0-9767985-8-1 |
| Pages: | 913 |
| Hardcopy: | $185.00 |
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