Authors: J.G. Fossum, V.P. Trivedi, M.M. Chowdhury, S.H. Kim and W. Zhang
Affilation: University of Florida, United States
Pages: 674 - 679
Keywords: nonclassical MOSFETs, double-gate MOSFETs, ultra-thin body, ballistic transport
Recent upgrades of UFDG, a process/physics-based compact model for nonclassical MOSFETs having ultra-thin Si bodies (UTB), are overviewed, and several recent applications of the model are presented, exemplifying the potential benefits of FinFETs in nanoscale CMOS circuits in which classical MOSFETs will not adequately perform.