Authors: J.R. Hauser
Affilation: N.C. State University, United States
Pages: 610 - 615
Keywords: MOS FET model, mobility, IV characteristic
A new and improved MOS I-V model will be presented using a more exact approach to include surface field dependent mobility effects. Mobility degradation effects are included in the basic I-V differential equation as opposed to adding in a more approximate manner to the integrated I-V equation. A comparison of the model will also be given to experimental data for both long and short channel MOS devices. A consistent set of model parameters can accurately describe the I-V characteristics of both long and short channel MOS devices. Methods of extending the model to include the subthreshold I-V region will also be presented.