| |
 | Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 2: Nanoscale Fabrication |
| | Fabricating Nanoscale Features Using the 2-Step NERIME TSI Nanolithography Process | | Authors: | S.F. Gilmartin, K. Arshak, D. Collins, O. Korostynska and A. Arshak | | Affilation: | Analog Devices, IE | | Pages: | 233 - 236 | | Keywords: | ion beam lithography, NERIME, nanolithography, topography, etch, semiconductor fabrication | | Abstract: | The 2-step negative resist image by dry etching (2-step NERIME) focused ion beam (FIB) top surface imaging (TSI) process is a novel nanolithography technique for creating nanometer scale resist features using conventional DNQ/novolak resists. The 2-step NERIME process combines the advantages of FIB lithography and TSI processing, and delivers high aspect ratio nanometer-scale resist CDs. Previous work has reported 90nm resist critical dimensions (CDs) on topography using the 2-Step NERIME process. We present 90nm resist CDs over substrate topography, and demonstrate fabrication of 80nm etched features masked using the 2-step NERIME process.
The etched nanoscale features exhibit minimal line edge roughness (LER) and excellent profile control, and demonstrate the suitability of the 2-step NERIME process as a nanolithography technique for applications requiring nanometer feature CD and profile control. Such etched features are of potential use in a variety of applications such as nanosensors, NEMs, MEMs, DRAM, CMOS and BiCMOS processing. | | ISBN: | 0-9767985-8-1 |
| Pages: | 913 |
| Hardcopy: | $185.00 |
|
| Order: | Mail/Fax Form |
| Special: | 3 CD Set — 15% off with Free Shipping |
| Up | |
|
| nanoPRwire™ |
 |
| News Headlines |
 |
|
|
| |
| |
|
| | |
| |
|
|
