Keywords: high brigthness, LED, throughput, wafer bond
We have developed a new wafer-bonding process and equipment for significantly increasing the throughput of high-brightness light emitting diodes and other devices that could benefit from group semiconductor wafer bonding. I will present this solution in more detail while explaining the technical limitations and requisites for successful implementation. Utility of the method will be demonstrated with experimental results from previously bonded wafers.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 303 - 305
Industry sector: Advanced Materials & Manufacturing
Topic: Advanced Manufacturing
ISBN: 0-9767985-8-1