InAs Quantum Dots Grown by MOCVD for Mid-infrared Emission
Authors:
X.H. Tang, Z.Y. Yin, J.H. Zhao and D. Sentosa
Affilation:
NTU, SG
Pages:
145 - 148
Keywords:
quantum dots, MOCVD, InAs
Abstract:
InAs quantum dots grown on InGaAs.InP matrix by MOCVD has been studied. Formation of the InAs QDs with different growth conditions has been investigated. Using a two-step growth method, high density, uniform QDs have been grown. The emission of the QDs has been measured. The emission wavelength of the QDs reaches 2.3 um at 77K.
