Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Nanoscale Fabrication Chapter 2

InAs Quantum Dots Grown by MOCVD for Mid-infrared Emission

Authors: X.H. Tang, Z.Y. Yin, J.H. Zhao and D. Sentosa

Affilation: NTU, Singapore

Pages: 145 - 148

Keywords: quantum dots, MOCVD, InAs

Abstract:
InAs quantum dots grown on InGaAs.InP matrix by MOCVD has been studied. Formation of the InAs QDs with different growth conditions has been investigated. Using a two-step growth method, high density, uniform QDs have been grown. The emission of the QDs has been measured. The emission wavelength of the QDs reaches 2.3 um at 77K.


ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95

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