Authors: E. Ramayya, D. Vasileska, S.M. Goodnick and I. Knezevic
Affilation: Arizona State University, United States
Pages: 13 - 15
Keywords: discrete impurity effects, unintentional doping, interface traps, nanowires, Monte Carlo
We investigate two issues in this paper. First, we examine the role of interface-traps on the device drain current in an SOI nanowire MOSFET. Afterwords, we investigate the role of the interface-roughness on the low-field electron mobility using the Ando model which is more sophisticated with respect to the model used in the device simulator.