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 | Nanotech 2006 Vol. 1
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1
Chapter 8: Characterization |
| | A Novel Approach of Sample Preparation for SCM Inspection in the DRAM Device Structures | | Authors: | J.L. Lue, H.W Liu, E. Wu, B. Pai, S. Fan and T. Wang | | Affilation: | ProMOS Technologies Inc, TW | | Pages: | 753 - 755 | | Keywords: | deep trench, SCM, DRAM, 2-D doping | | Abstract: | This paper discusses the removal of the doped-polysilicon of a gate transistor by wet chemical etching containing the spacer oxide and nitride that remain. This technique significantly improves the image quality of 2-D doping profile of SCM that properly provides the results of the desired device structures for inline monitoring and failure analysis or for product characterization. | | ISBN: | 0-9767985-6-5 |
| Pages: | 871 |
| Hardcopy: | $185.00 |
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