Authors: D.A. Antonov, D.O. Filatov, G.A. Maximov, A.V. Zenkevich and Yu.Yu. Lebedinskii
Affilation: Nizhni Novgorod State University, Russian Federation
Pages: 258 - 260
Keywords: electronic properties, MeOx, HfO2, ZrO2, Combined AFM\\STM, thin films, silicide, MOS structures
The advantages of the combined AFM/STM technique for investigating the dielectric properties of ultrathin MeOx layers with high spatial resolution is shown. Particularly, MO2/Si (M=Hf, Zr) interface evolution upon heat treatments is explored. It is observed that vacuum annealing in the range Ò =800-900 °Ñ of ZrO2 films grown on Si results in the degradation ZrO2,HfO2 with formation of a Zr, Hf silicide layer which starts to grow from ZrO2/Si, HfO2/Si interface.