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 | Nanotech 2006 Vol. 1
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1
Chapter 1: Nanoscale Structures and Devices |
| | Fabrication and Transistor Demonstration on Si-based Nanomembranes | | Authors: | H-C Yuan, M.M. Roberts, D.E. Savage, M.G. Lagally, Z. Ma and G.K. Celler | | Affilation: | University of Wisconsin-Madison, US | | Pages: | 68 - 71 | | Keywords: | elastic strain sharing, nanomembrane, Si, SiGe, transferable | | Abstract: | We demonstrate the fabrication of free standing Si, SiGe, and Si/SiGe/Si membranes and the ability to transfer them onto various kinds of host substrates. In addition to the unstrained Si, SiGe membranes, strained Si is realized from Si/SiGe/Si film stack through elastic strain sharing between SiGe alloy and Si layers. We have fabricated thin-film transistors (TFTs) using either high-temperature or low-temperature process on the transferred membranes and demonstrate high current drive capability. This technique also enables numerous possibility of hetero-material integration. | | ISBN: | 0-9767985-6-5 |
| Pages: | 871 |
| Hardcopy: | $185.00 |
| Order: | Mail/Fax Form |
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