Authors: N. Abelé, V. Pott, K. Boucart, F. Casset, K. Séguéni, P. Ancey and A.M. Ionescu
Affilation: Swiss Federal Institute of Technology of Lausanne, Switzerland
Pages: 553 - 556
Keywords: MEMS, resonator, modeling, RSG-MOSFET, MOSFET detection
This work reports on analytical modeling and investigation of Resonant Suspended-Gate MOSFETs (RSG-MOSFET) as future solutions for RF applications including MEMS and ICs. Pure metal-metal capacitive detection for resonators is shown to be the most limiting factor for the use of high frequency resonators in circuit application. We demonstrate the necessity of using a MOSFET detection instead of a capacitive one for very high frequency resonators. The analytical model is based on the Resonant Gate Transistor (RGT) model that was adjusted to include new resonator geometries, scaled nm-to-ìm device dimensions and based on a more advanced transistor model.