Nano Science and Technology Institute - NSTI  
Nano Science and Technology Institute   Home | Subscribe | Site Map  
  ABOUT | COURSES | EVENTS | PUBLICATIONS | LEADERSHIP | OUTREACH | NEWS | PRESS | JOBS | Nanotechnology Solutions
px
px fade_top
Publications
Nanotech 2008 CDROM
Nanotech 2007 CDROM
Nanotech 2006 CDROM
Nanotech 2005 CDROM
Nanotech 2004 CDROM
3 CDROM Special Offer
Nanotech 2008 Vol. 1
Nanotech 2008 Vol. 2
Nanotech 2008 Vol. 3
Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 2
Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 4
Nanotech 2006 Vol. 1
Nanotech 2006 Vol. 2
Nanotech 2006 Vol. 3
Nanotech 2005 Vol. 1
Nanotech 2005 Vol. 2
Nanotech 2005 Vol. 3
WCM 2005
Nanotech 2004 Vol. 1
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 3
Nanotech 2003 Vol. 1
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 3
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 2
Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 2
MSM 2000
MSM 99
MSM 98
Index of Authors
Index of Keywords
Index of Affiliations
Library Request Form
Shopping Cart
Order Form
 
Publications Publications
Nanotech 2005 Vol. 3
p
 
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
 
Chapter 5: Nano Photonics and Optoelectronics
 

Demonstration of Pulsed Silicon Raman Laser

Authors:O. Boyraz and B. Jalali
Affilation:University of California, Los Angeles, US
Pages:324 - 326
Keywords:lasers, silicon photonics, Raman, Raman laser, nanophotonics
Abstract:Recently, Raman effect in silicon has been pursued for light generation and amplification by utilizing high Raman gain coefficient of silicon. However, free carrier generation due to two photon absorption limited the achieving high Raman gain. Pulsed pumping technique has been utilized to mitigate free carrier accumulation and achieve high gain. In this paper, we report the demonstration of a Raman laser in silicon by pulsed pumping technique. A pump laser with 25 MHz repetition rate at 1540 nm and with 30 ps pulses is used to obtain Raman laser in silicon. Lasing is measured at 1675 nm. A clear lasing threshold is observed at 9W peak pulse power along with a slope efficiency of 8.5% above threshold. Additionally, temporal and spectral profiles of the silicon Raman laser are studied experimentally.
ISBN:0-9767985-2-2
Pages:786
Hardcopy:$165.00
 
Order:Mail/Fax Form
Special:3 CD Set — 15% off with Free Shipping
Up
nanoPRwire™
nanoPRwire
News Headlines
nano World news
 
 
 
 
px
© Nano Science and Technology Institute     About NSTI | Terms of Use | Privacy Policy | Contact