 | Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3
Chapter 1: Nanoscale Device and Process Modeling |
| - | Kinetic Monte Carlo Simulation of Defect-Mediated Organization in Quantum Dot Self-Assembly |
| | D. Gao, A. Kaczynski and J.A. Jaszczak |
| | Michigan Technological University, US |
| - | Modeling of Germanium/Silicon Interdiffusion in Silicon/Silicon Germanium/Silicon Single Quantum Well Structures |
| | M. Hasanuzzaman and Y.M. Haddara |
| | McMaster University, CA |
| - | Multi-Scale Computational Framework: Theoretical approach and application for the growth of carbon nanotubes |
| | A.V. Vasenkov, A.I. Fedoseyev, V.I. Kolobov, Ki-Ha Hong, H.S. Choi, K.H. Kim, J. Kim, H.S. Lee and J.K. Shin |
| | CFD Research Corporation, US |
| - | A Physically-Based Electron Mobility Model for Strained Si Devices |
| | S. Dhar, H. Kosina, V. Palankovski, E. Ungersboeck and S. Selberherr |
| | TU-Vienna, AT |
| - | Spin Polarization in GaAs/Al0.24Ga0.76As Heterostructures |
| | A. Ashok, R. Akis, D. Vasileska and D.K. Ferry |
| | Arizona State University, US |
| - | A Comprehensive Kinetic Model for Wet Oxidation of Silicon Germanium Alloys |
| | M.A. Rabie, Y.M. Haddara and J. Carette |
| | McMaster University, CA |
| - | Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium |
| | C. Jungemann, T. Grasser, B. Neinhüs, and B. Meinerzhagen |
| | Technische Universität Braunschweig, DE |
| - | Simulation of Dynamic NBTI Degradation for a 90nm CMOS Technology |
| | R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring and S. Selberherr |
| | Vienna University of Technology, AT |
| - | Modeling of Size Quantization in Strained Si-nMOSFETs with the Improved Modified Local Density Approximation |
| | C.D. Nguyen, C. Jungemann and B. Meinerzhagen |
| | Technical University Braunschweig, DE |
| - | Low Field Electron Mobility in Ultra-Thin Strained-Si Directly on Insulator MOSFET in Sub-0.1µm Regime |
| | S. Amtablian and S. Barraud |
| | CEA-DRT/LETI, FR |
| - | Examination of the Effects of Unintentional Doping on the Operation of FinFETs with Monte Carlo Simulation Integrated with Fast Multipole Method (FMM) |
| | H. Khan, S.S. Ahmed, D. Vasileska |
| | Arizona State University, US |
| - | Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices |
| | R. Entner, A. Gehring, H. Kosina, T. Grasser and S. Selberherr |
| | TU-Vienna, AT |
| - | Electronic Properties of Gaphitic Surfaces with Adsorbed Aromatic Amino Acids |
| | C. Roman, F. Ciontu and B. Courtois |
| | TIMA Laboratory, FR |
| - | Mismatch Improvement with XMOS Structure |
| | P.B.Y. Tan, A.V. Kordesch and O. Sidek |
| | Silterra Malaysia Sdn Bhd, MY |
| - | Analytical Surface Potential Model with Polysilicon Gate Depletion Effect for NMOS |
| | E. Cumberbatch, H. Abebe, H. Morris and V. Tyree |
| | USC/ISI MOSIS, US |
| - | Controllable Electron Transport in the Lateral Nanostructure |
| | V.A. Pogrebnyak, E. Akray and A.N. Küçükaltun |
| | Cukurova University, TR |
| - | MOSFET Analytical Inversion Charge Model with Quantum Effects using a Triangular Potential Well Approximation |
| | H. Abebe, E.C. Cumberbatch, V. Tyree and H.C. Morris |
| | USC/ISI MOSIS, US |
| - | SOS Gate Capacitance Modeling |
| | H.C. Morris, E.C. Cumberbatch, H. Abebe |
| | San Jose State University, US |
| - | Hole Transport Simulations in p-channel Si MOSFETs |
| | S. Krishnan, D. Vasileska and M.V. Fischetti |
| | Arizona State University, US |
| - | Monte Carlo Transport Calculations of Strained SiGe Heterostructures from Ab-Initio Band-structures |
| | B. Zorman, S. Krishnan, D. Vasileska, J. Xu and M. Van Schilfgaarde |
| | Arizona State University, US |
| - | Random Dopant Induced Fluctuations of Characteristics in Deep Sub-micron MOSFETs |
| | H-M Chou, S-C Lo, J-H Tsai and Y. Li |
| | NCHC, TW |
| - | Monte Carlo Simulation of Transport in Two-Dimensional Electron Gas via Energy Relaxation |
| | X. Zhao and B. Nabet |
| | Drexel University, US |
| - | 2D Quantum Mechanical Device Modeling and Simulation: Single and Multi-fin FinFET |
| | K. Kim, I-S Park and T. Won |
| | Inha University, KR |
| - | Topography Simulation for Structural Analysis Using Cell Advancing Method |
| | J-G Lee, S. Yoon, O. Kwon and T. Won |
| | Inha University, KR |
| - | RLC Reduction Scheme for Modeling Interconnection Line Delay in nano-CMOS Circuits |
| | C. Jung, S. Yoon and T. Won |
| | Inha University, KR |
| - | KMC Simple Model for BmIn Cluster Evolution during Boron Diffusion: Theoretical or Experimental Parameters of Point Defects |
| | J-H Yoo, C-O Hwang, J. Seo, O. Kwon and T. Won |
| | Inha University, KR |
| - | A Novel SPICE Compatible Current Model for OLED Circuit Simulation |
| | Y. Li, J-W Lee, B-S Lee, C-S Lu and W-H Chen |
| | National Chiao Tung University, TW |
| - | Investigation of Metal Diffusion into Polymers via ab initio Simulations |
| | L. Dai, S.W. Yang, X.T. Chen, V.B.C. Tan and P. Wu |
| | National University of Singapore, SG |
| - | A Nano-Transistor with a Cavity |
| | C. Ravariu, A. Rusu, M. Profirescu and F. Ravariu |
| | Politehnica University of Bucharest, RO |
| - | Large Scale Simulation of the Nano-Scale High-Temperature-Superconductor Device for the Generating of Continuous Terahertz Waves |
| | M. Iizuka, M. Tachiki, K. Minami, S. Tejima and H. Nakamura |
| | Research Orgnization Science and Technology, JP |
| - | A Distributed Compact Model for High-Density, On-Chip Trench Capacitors in High-Frequency Applications |
| | S. Shastri, Y. Wu, W.Z. Cai and G. Grivna |
| | ON Semiconductor, US |
| ISBN: | 0-9767985-2-2 |
| Pages: | 786 |
| Hardcopy: | $165.00 |
| Special: | 3 CD Set 15% off with Free Shipping |
|
| Order: | Mail/Fax Form |
| Up | |
