Nano Science and Technology Institute
Nanotech 2005 Vol. 3
Nanotech 2005 Vol. 3
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 3

Chapter 1:

Nanoscale Device and Process Modeling

-Kinetic Monte Carlo Simulation of Defect-Mediated Organization in Quantum Dot Self-Assembly
 D. Gao, A. Kaczynski and J.A. Jaszczak
 Michigan Technological University, US
-Modeling of Germanium/Silicon Interdiffusion in Silicon/Silicon Germanium/Silicon Single Quantum Well Structures
 M. Hasanuzzaman and Y.M. Haddara
 McMaster University, CA
-Multi-Scale Computational Framework: Theoretical approach and application for the growth of carbon nanotubes
 A.V. Vasenkov, A.I. Fedoseyev, V.I. Kolobov, Ki-Ha Hong, H.S. Choi, K.H. Kim, J. Kim, H.S. Lee and J.K. Shin
 CFD Research Corporation, US
-A Physically-Based Electron Mobility Model for Strained Si Devices
 S. Dhar, H. Kosina, V. Palankovski, E. Ungersboeck and S. Selberherr
 TU-Vienna, AT
-Spin Polarization in GaAs/Al0.24Ga0.76As Heterostructures
 A. Ashok, R. Akis, D. Vasileska and D.K. Ferry
 Arizona State University, US
-A Comprehensive Kinetic Model for Wet Oxidation of Silicon Germanium Alloys
 M.A. Rabie, Y.M. Haddara and J. Carette
 McMaster University, CA
-Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium
 C. Jungemann, T. Grasser, B. Neinhüs, and B. Meinerzhagen
 Technische Universität Braunschweig, DE
-Simulation of Dynamic NBTI Degradation for a 90nm CMOS Technology
 R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring and S. Selberherr
 Vienna University of Technology, AT
-Modeling of Size Quantization in Strained Si-nMOSFETs with the Improved Modified Local Density Approximation
 C.D. Nguyen, C. Jungemann and B. Meinerzhagen
 Technical University Braunschweig, DE
-Low Field Electron Mobility in Ultra-Thin Strained-Si Directly on Insulator MOSFET in Sub-0.1µm Regime
 S. Amtablian and S. Barraud
 CEA-DRT/LETI, FR
-Examination of the Effects of Unintentional Doping on the Operation of FinFETs with Monte Carlo Simulation Integrated with Fast Multipole Method (FMM)
 H. Khan, S.S. Ahmed, D. Vasileska
 Arizona State University, US
-Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices
 R. Entner, A. Gehring, H. Kosina, T. Grasser and S. Selberherr
 TU-Vienna, AT
-Electronic Properties of Gaphitic Surfaces with Adsorbed Aromatic Amino Acids
 C. Roman, F. Ciontu and B. Courtois
 TIMA Laboratory, FR
-Mismatch Improvement with XMOS Structure
 P.B.Y. Tan, A.V. Kordesch and O. Sidek
 Silterra Malaysia Sdn Bhd, MY
-Analytical Surface Potential Model with Polysilicon Gate Depletion Effect for NMOS
 E. Cumberbatch, H. Abebe, H. Morris and V. Tyree
 USC/ISI MOSIS, US
-Controllable Electron Transport in the Lateral Nanostructure
 V.A. Pogrebnyak, E. Akray and A.N. Küçükaltun
 Cukurova University, TR
-MOSFET Analytical Inversion Charge Model with Quantum Effects using a Triangular Potential Well Approximation
 H. Abebe, E.C. Cumberbatch, V. Tyree and H.C. Morris
 USC/ISI MOSIS, US
-SOS Gate Capacitance Modeling
 H.C. Morris, E.C. Cumberbatch, H. Abebe
 San Jose State University, US
-Hole Transport Simulations in p-channel Si MOSFETs
 S. Krishnan, D. Vasileska and M.V. Fischetti
 Arizona State University, US
-Monte Carlo Transport Calculations of Strained SiGe Heterostructures from Ab-Initio Band-structures
 B. Zorman, S. Krishnan, D. Vasileska, J. Xu and M. Van Schilfgaarde
 Arizona State University, US
-Random Dopant Induced Fluctuations of Characteristics in Deep Sub-micron MOSFETs
 H-M Chou, S-C Lo, J-H Tsai and Y. Li
 NCHC, TW
-Monte Carlo Simulation of Transport in Two-Dimensional Electron Gas via Energy Relaxation
 X. Zhao and B. Nabet
 Drexel University, US
-2D Quantum Mechanical Device Modeling and Simulation: Single and Multi-fin FinFET
 K. Kim, I-S Park and T. Won
 Inha University, KR
-Topography Simulation for Structural Analysis Using Cell Advancing Method
 J-G Lee, S. Yoon, O. Kwon and T. Won
 Inha University, KR
-RLC Reduction Scheme for Modeling Interconnection Line Delay in nano-CMOS Circuits
 C. Jung, S. Yoon and T. Won
 Inha University, KR
-KMC Simple Model for BmIn Cluster Evolution during Boron Diffusion: Theoretical or Experimental Parameters of Point Defects
 J-H Yoo, C-O Hwang, J. Seo, O. Kwon and T. Won
 Inha University, KR
-A Novel SPICE Compatible Current Model for OLED Circuit Simulation
 Y. Li, J-W Lee, B-S Lee, C-S Lu and W-H Chen
 National Chiao Tung University, TW
-Investigation of Metal Diffusion into Polymers via ab initio Simulations
 L. Dai, S.W. Yang, X.T. Chen, V.B.C. Tan and P. Wu
 National University of Singapore, SG
-A Nano-Transistor with a Cavity
 C. Ravariu, A. Rusu, M. Profirescu and F. Ravariu
 Politehnica University of Bucharest, RO
-Large Scale Simulation of the Nano-Scale High-Temperature-Superconductor Device for the Generating of Continuous Terahertz Waves
 M. Iizuka, M. Tachiki, K. Minami, S. Tejima and H. Nakamura
 Research Orgnization Science and Technology, JP
-A Distributed Compact Model for High-Density, On-Chip Trench Capacitors in High-Frequency Applications
 S. Shastri, Y. Wu, W.Z. Cai and G. Grivna
 ON Semiconductor, US
ISBN:0-9767985-2-2
Pages:786
Hardcopy:$109.95
 
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