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 | Nanotech 2005 Vol. 2
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2
Chapter 7: NEMS and MEMS Fabrication |
| | Fabrication of Silicon Nanowires Using Atomic Layer Deposition | | Authors: | D. Gopireddy, C.G. Takoudis, D. Gamota, J. Zhang and P.W. Brazis | | Affilation: | University of Illinois at Chicago, US | | Pages: | 515 - 518 | | Keywords: | nanowires, ALD, nanoparticles, LPCVD, precursors | | Abstract: | We will present the synthesis of silicon nanowires using Atomic Layer Deposition (ALD) technique. ALD allows the growth of nanowires in a controlled fashion using the nanoparticles as the seed. The diameter and the length of the nanowire can be precisely controlled using this method. Nanometer size silicon quantum dots / nanoparticles are deposited on silicon dioxide substrate by thermal decomposition of silane (SiH4) using Low Pressure Chemical Vapor Deposition (LPCVD). By controlling the early stages of silicon film growth, silicon nanoparticles of nanometer size can be obtained. These nanoparticles are used at the “seed” to grow silicon nanowires using ALD. Diclorosilane and silane are the precursors used in alternating cycles to form silicon nanowires. It is essential to adjust the experimental conditions to obtain saturated surface reactions of the precursors and self controlled growth process- optimize the deposition temperature, pressure, flow rate of the precursors and the pulse cycle times. The length of the nanowires formed is a function of the number of precursor cycles. | | ISBN: | 0-9767985-1-4 |
| Pages: | 808 |
| Hardcopy: | $165.00 |
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