Application of Magnetic Neutral Loop Discharge Plasma in Deep Quartz and Silicon Etching Process for MEMS/NEMS Devices Fabrication
Authors:
Y. Morikawa, T. Hayashi, K. Suu and M. Ishikawa
Affilation:
ULVAC, Inc., JP
Pages:
501 - 503
Keywords:
deep etching, NLD, plasma, modulation
Abstract:
ULVAC’s Si deep etching technique has achieved high etching rate as high as 20 um/min as well as extremely high selectivity over resist mask as high as 100 or higher ensuring good etching performance.
