| |
 | Nanotech 2005 Vol. 2
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2
Chapter 5: Surfaces and Films |
| | Low Temperature Deposition of High-Quality Nanometer-Thick Dielectric Films in an Electron Cyclotron Resonance (ECR) Plasma-Enhanced CVD System | | Authors: | L. Xie, J. Deng, S. Shepard, J. Tsakirgis and E. Chen | | Affilation: | Harvard University, US | | Pages: | 328 - 331 | | Keywords: | ultra-thin dielectric film, PECVD | | Abstract: | One of the challenges facing in nanofabrication is to deposit dielectric films with thickness compared to the feature size under fabrication, typically in a range of nanometer, for the purposes such as gate dielectrics, surface passivation, diffusion barrier, charge storage gap, and etc. In addition, many applications use a variety of substrates that require deposition temperatures less than 200_0†2C without losing film qualities. In this work, we demonstrate the feasibility of using electron cyclotron resonance (ECR) plasma-enhanced CVD method to achieve ultra-thin (nanometer scale) dielectric thin films at temperatures less than 200_0†2C. In particular, Si3N4 films with thickness in sub-ten nanometer were successfully deposited at temperature | | ISBN: | 0-9767985-1-4 |
| Pages: | 808 |
| Hardcopy: | $165.00 |
|
| Order: | Mail/Fax Form |
| Special: | 3 CD Set — 15% off with Free Shipping |
| Up | |
|
| Upcoming Events |
 |
 |
 |
 |
| nanoPRwire™ |
 |
| News Headlines |
 |
|
|
| |
| |
|
| | |
| |
|
|
