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 | WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 4: WCM 2003 Invited Papers |
| | A Framework for Generic Physics Based Double-Gate MOSFET Modeling | | Authors: | M. Chan, Y. Taur, C.H. Lin, J. He, A. Niknejad and C. Hu | | Affilation: | Hong Kong University of Science & Technology, HK | | Pages: | 315 - 318 | | Keywords: | CMOS device, double-gate MOSFET, circuit simulation, device model, SPICE, BSIM | | Abstract: | This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to accommodate different device structures takes a much high precedence compared with conventional modeling approaches. In addition, detail device physics based on 2-D and even 3-D analysis at very small dimensions have to be incorporated to describe the device operation accurately. A flexible quasi-Femi potential core model is described to achieve both physical accuracy and extendibility. | | ISBN: | 0-9767985-3-0 |
| Pages: | 412 |
| Hardcopy: | $120.00 |
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