 | WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 4: WCM 2003 Invited Papers |
| - | Implications of Gate Tunneling and Quantum Effects in the Gate-Channel Stack |
| | R.W. Dutton and C-H Choi |
| | Stanford University, US |
| - | A Basic Property of MOS Transistors and its Circuit Implications |
| | E. Vittoz, C. Enz and F. Krummenacher |
| | Swiss Center for Electronics & Microtechnology, CH |
| - | USIM Design Considerations |
| | A. Bell, K. Singhal and H. Gummel |
| | Agere Systems, US |
| - | Theory, Development and Applications of the Advanced Compact MOSFET (ACM) Model |
| | C. Galup-Montoro, M.C. Schneider, A.I.A. Cunha and O.C. Gouveia-Filho |
| | Universidade Federal de Santa Catarina, BR |
| - | HiSIM: Accurate Charge Modeling Important for RF Era |
| | M. Miura-Mattausch, D. Navarro, H. Ueno, H.J. Mattausch, K. Morikawa, S. Itoh, A. Kobayashi and H. Masuda |
| | Hiroshima University, JP |
| - | An Advanced Surface-Potential-Plus MOSFET Model |
| | J. He, X. Xi, M. Chan, A. Niknejad and C. Hu |
| | University of California at Berkeley, US |
| - | A Technology-based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization |
| | X. Zhou, S.B. Chiah and K.Y. Lim |
| | Nanyang Technological University, SG |
| - | A Framework for Generic Physics Based Double-Gate MOSFET Modeling |
| | M. Chan, Y. Taur, C.H. Lin, J. He, A. Niknejad and C. Hu |
| | Hong Kong University of Science & Technology, HK |
| - | A Physics-Based Compact Model for Nano-Scale DG and FD/SOI MOSFETs |
| | J. Fossum, L. Ge and M-H Chiang |
| | University of Florida, US |
| - | BJT Modeling with VBIC, Basics and V1.3 Updates |
| | C. McAndrew, T. Bettinger, L. Lemaitre and M. Tutt |
| | Motorola, US |
| - | Compact Bipolar Transistor Modeling - Issues and possible solutions |
| | M. Schroter |
| | University of Technology Dresden, DE |
| - | Noise Modeling with MOS Model 11 for RF-CMOS Applications |
| | A.J. Scholten, L.F. Tiemeijer, R. van Langevelde, R.J. Havens, A.T.A. Zegers-van Duijnhoven, V.C. Venezia and D. Klaassen |
| | Philips Research Laboratories Eindhoven, NE |
| - | Physical Modeling of Substrate Resistance in RF MOSFETs |
| | J. Han, M. Je and H. Shin |
| | Korea Advanced Institute of Science & Technology, KR |
| - | Compact Modeling for RF and Microwave Integrated Circuits |
| | A.M. Niknejad, M. Chan, C. Hu, B. Brodersen, J. Xi, J. He, S. Emami, C. Doan, Y. Cao, P. Su, H. Wan, M. Dunga and C.H. Lin |
| | University of California at Berkeley, US |
| - | Vector Potential Equivalent Circuit for Efficient Modeling of Interconnect Inductance |
| | A. Pacelli |
| | SUNY-Stony Brook, US |
| ISBN: | 0-9767985-3-0 |
| Pages: | 412 |
| Hardcopy: | $120.00 |
| Special: | 3 CD Set — 15% off with Free Shipping |
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