Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling

Chapter 4:

WCM 2003 Invited Papers

-Implications of Gate Tunneling and Quantum Effects in the Gate-Channel Stack
 R.W. Dutton and C-H Choi
 Stanford University, US
-A Basic Property of MOS Transistors and its Circuit Implications
 E. Vittoz, C. Enz and F. Krummenacher
 Swiss Center for Electronics & Microtechnology, CH
-USIM Design Considerations
 A. Bell, K. Singhal and H. Gummel
 Agere Systems, US
-Theory, Development and Applications of the Advanced Compact MOSFET (ACM) Model
 C. Galup-Montoro, M.C. Schneider, A.I.A. Cunha and O.C. Gouveia-Filho
 Universidade Federal de Santa Catarina, BR
-HiSIM: Accurate Charge Modeling Important for RF Era
 M. Miura-Mattausch, D. Navarro, H. Ueno, H.J. Mattausch, K. Morikawa, S. Itoh, A. Kobayashi and H. Masuda
 Hiroshima University, JP
-An Advanced Surface-Potential-Plus MOSFET Model
 J. He, X. Xi, M. Chan, A. Niknejad and C. Hu
 University of California at Berkeley, US
-A Technology-based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization
 X. Zhou, S.B. Chiah and K.Y. Lim
 Nanyang Technological University, SG
-A Framework for Generic Physics Based Double-Gate MOSFET Modeling
 M. Chan, Y. Taur, C.H. Lin, J. He, A. Niknejad and C. Hu
 Hong Kong University of Science & Technology, HK
-A Physics-Based Compact Model for Nano-Scale DG and FD/SOI MOSFETs
 J. Fossum, L. Ge and M-H Chiang
 University of Florida, US
-BJT Modeling with VBIC, Basics and V1.3 Updates
 C. McAndrew, T. Bettinger, L. Lemaitre and M. Tutt
 Motorola, US
-Compact Bipolar Transistor Modeling - Issues and possible solutions
 M. Schroter
 University of Technology Dresden, DE
-Noise Modeling with MOS Model 11 for RF-CMOS Applications
 A.J. Scholten, L.F. Tiemeijer, R. van Langevelde, R.J. Havens, A.T.A. Zegers-van Duijnhoven, V.C. Venezia and D. Klaassen
 Philips Research Laboratories Eindhoven, NE
-Physical Modeling of Substrate Resistance in RF MOSFETs
 J. Han, M. Je and H. Shin
 Korea Advanced Institute of Science & Technology, KR
-Compact Modeling for RF and Microwave Integrated Circuits
 A.M. Niknejad, M. Chan, C. Hu, B. Brodersen, J. Xi, J. He, S. Emami, C. Doan, Y. Cao, P. Su, H. Wan, M. Dunga and C.H. Lin
 University of California at Berkeley, US
-Vector Potential Equivalent Circuit for Efficient Modeling of Interconnect Inductance
 A. Pacelli
 SUNY-Stony Brook, US
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