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 | WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 3: WCM 2004 Invited Papers |
| | The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation | | Authors: | X. Xi, J. He, M. Dunga, C-H Lin, B. Heyderi, H. Wan, M. Chan, A.M. Niknejad and C. Hu | | Affilation: | University of California at Berkeley, US | | Pages: | 233 - 236 | | Keywords: | MOSFETs, compact modeling, surfacepotential-plus model, small dimensional effects | | Abstract: | This paper describes the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate non-charge-sheet based physics, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs. | | ISBN: | 0-9767985-3-0 |
| Pages: | 412 |
| Hardcopy: | $120.00 |
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