Miura-Mattausch M., Hosokawa S., Navarro D., Matsumoto S., Ueno H., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Kage T., Miyamoto S.
Hiroshima University, JP
Keywords: HiSIM, MOSFET model, noise measurement, surface potential
Accurate prediction of noise characteristics is a prerequisite for RF-circuit simulation. We demonstrate here that the 1/f noise is modeled only with the trap density as a model parameter and the thermal drain noise is determined only by the I-V characteristics even for short-channelMOSFETs. Good agreement with measurements is the justification of the model implemented in HiSIM, the circuit simulation model based on a full surface-potential description. The thermal drain-noise coefficient of short-channel MOSFETs increases from 2/3 under the saturation condition. The origin is explained by the potential increase along the channel.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 229 - 232
Industry sector: Sensors, MEMS, Electronics
Topic: WCM - Compact Modeling
ISBN: 0-9767985-3-0