van Langevelde R., Scholten A.J., Klaassen D.B.M.
Philips Research Laboratories, NL
Keywords: compact MOSFET modelling, induced gate noise, MOS Model 11, surface potential, thermal noise
MOS Model 11 (MM11) is a surface-potential-based compact MOSFET model, which was introduced in 2001 (level 1100). An update of MM11, level 1101, was introduced in 2002. At the moment a second update of MM11, level 1102, has been completed and is under test. It includes: i) an iterative solution of the surface potential; ii) an improved description of the velocity saturation yielding a better modelling of the transconductance in saturation; and iii) a better description of noise, especially the induced gate current noise. In this paper we describe these improvements and show the resulting improved modelling of transistor performance.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 223 - 228
Industry sector: Sensors, MEMS, Electronics
Topic: WCM - Compact Modeling
ISBN: 0-9767985-3-0