WCM 2004 Invited Papers

	WCM 2005 Technical Proceedings of the 2005 Workshop on Compact Modeling Chapter 3: WCM 2004 Invited Papers
-	Technology Limits and Compact Model for SiGe Scaled FETs
	R.W. Dutton and C-H Choi
	Stanford, US
-	Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects
	Z. Yu, D. Zhang and L. Tian
	Tsinghua University, CN
-	Recent Enhancements of MOS Model 11
	R. van Langevelde, A.J. Scholten and D.B.M. Klaassen
	Philips Research Laboratories, NL
-	Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description
	M. Miura-Mattausch, S. Hosokawa, D. Navarro, S. Matsumoto, H. Ueno, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, T. Kage, and S. Miyamoto
	Hiroshima University, JP
-	The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation
	X. Xi, J. He, M. Dunga, C-H Lin, B. Heyderi, H. Wan, M. Chan, A.M. Niknejad and C. Hu
	University of California at Berkeley, US
-	Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs
	X. Zhou, S.B. Chiah, K. Chandrasekaran, K.Y. Lim, L. Chan and S. Chu
	Nanyang Technological University, SG
-	Modeling and Characterization of Wire Inductance for High Speed VLSI Design
	N.D. Arora and L. Song
	Cadence Design Systems, US
-	R3, an Accurate JFET and 3-Terminal Diffused Resistor Model
	C. McAndrew
	Motorola, US
-	Advanced MOSFET Modeling for RF IC Design
	Y. Cheng
	Skyworks Solutions, US
-	RF Noise Models of MOSFETs- A Review
	S. Asgaran and M. Jamal Deen
	McMaster University, CA
-	Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors
	H. Tran and M. Schroter
	University of Technology Dresden, DE
-	Quasi-2D Compact Modeling for Double-Gate MOSFET
	M. Chan, T.Y. Man, J. He, X. Xi, C-H Lin, X. Lin, P.K. Ko, A.M. Niknejad and C. Hu
	Hong Kong University of Science and Technology, HK
-	Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs
	Q. Chen, L. Wang, R. Murali and J.D. Meindl
	Georgia Institute of Technology, US
-	Floating Gate Devices: Operation and Compact Modeling
	P. Pavan, L. Larcher and A. Marmiroli
	Università di Modena e Reggio Emilia, IT
ISBN:	0-9767985-3-0
Pages:	412
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