 | WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 3: WCM 2004 Invited Papers |
| - | Technology Limits and Compact Model for SiGe Scaled FETs |
| | R.W. Dutton and C-H Choi |
| | Stanford, US |
| - | Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects |
| | Z. Yu, D. Zhang and L. Tian |
| | Tsinghua University, CN |
| - | Recent Enhancements of MOS Model 11 |
| | R. van Langevelde, A.J. Scholten and D.B.M. Klaassen |
| | Philips Research Laboratories, NL |
| - | Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description |
| | M. Miura-Mattausch, S. Hosokawa, D. Navarro, S. Matsumoto, H. Ueno, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, T. Kage, and S. Miyamoto |
| | Hiroshima University, JP |
| - | The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation |
| | X. Xi, J. He, M. Dunga, C-H Lin, B. Heyderi, H. Wan, M. Chan, A.M. Niknejad and C. Hu |
| | University of California at Berkeley, US |
| - | Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs |
| | X. Zhou, S.B. Chiah, K. Chandrasekaran, K.Y. Lim, L. Chan and S. Chu |
| | Nanyang Technological University, SG |
| - | Modeling and Characterization of Wire Inductance for High Speed VLSI Design |
| | N.D. Arora and L. Song |
| | Cadence Design Systems, US |
| - | R3, an Accurate JFET and 3-Terminal Diffused Resistor Model |
| | C. McAndrew |
| | Motorola, US |
| - | Advanced MOSFET Modeling for RF IC Design |
| | Y. Cheng |
| | Skyworks Solutions, US |
| - | RF Noise Models of MOSFETs- A Review |
| | S. Asgaran and M. Jamal Deen |
| | McMaster University, CA |
| - | Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors |
| | H. Tran and M. Schroter |
| | University of Technology Dresden, DE |
| - | Quasi-2D Compact Modeling for Double-Gate MOSFET |
| | M. Chan, T.Y. Man, J. He, X. Xi, C-H Lin, X. Lin, P.K. Ko, A.M. Niknejad and C. Hu |
| | Hong Kong University of Science and Technology, HK |
| - | Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs |
| | Q. Chen, L. Wang, R. Murali and J.D. Meindl |
| | Georgia Institute of Technology, US |
| - | Floating Gate Devices: Operation and Compact Modeling |
| | P. Pavan, L. Larcher and A. Marmiroli |
| | Università di Modena e Reggio Emilia, IT |
| - | Technology Limits and Compact Model for SiGe Scaled FETs |
| | R.W. Dutton and C-H Choi |
| | Stanford, US |
| - | Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects |
| | Z. Yu, D. Zhang and L. Tian |
| | Tsinghua University, CN |
| - | Recent Enhancements of MOS Model 11 |
| | R. van Langevelde, A.J. Scholten and D.B.M. Klaassen |
| | Philips Research Laboratories, NL |
| - | Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description |
| | M. Miura-Mattausch, S. Hosokawa, D. Navarro, S. Matsumoto, H. Ueno, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, T. Kage, and S. Miyamoto |
| | Hiroshima University, JP |
| - | The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation |
| | X. Xi, J. He, M. Dunga, C-H Lin, B. Heyderi, H. Wan, M. Chan, A.M. Niknejad and C. Hu |
| | University of California at Berkeley, US |
| - | Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs |
| | X. Zhou, S.B. Chiah, K. Chandrasekaran, K.Y. Lim, L. Chan and S. Chu |
| | Nanyang Technological University, SG |
| - | Modeling and Characterization of Wire Inductance for High Speed VLSI Design |
| | N.D. Arora and L. Song |
| | Cadence Design Systems, US |
| - | R3, an Accurate JFET and 3-Terminal Diffused Resistor Model |
| | C. McAndrew |
| | Motorola, US |
| - | Advanced MOSFET Modeling for RF IC Design |
| | Y. Cheng |
| | Skyworks Solutions, US |
| - | RF Noise Models of MOSFETs- A Review |
| | S. Asgaran and M. Jamal Deen |
| | McMaster University, CA |
| - | Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors |
| | H. Tran and M. Schroter |
| | University of Technology Dresden, DE |
| - | Quasi-2D Compact Modeling for Double-Gate MOSFET |
| | M. Chan, T.Y. Man, J. He, X. Xi, C-H Lin, X. Lin, P.K. Ko, A.M. Niknejad and C. Hu |
| | Hong Kong University of Science and Technology, HK |
| - | Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs |
| | Q. Chen, L. Wang, R. Murali and J.D. Meindl |
| | Georgia Institute of Technology, US |
| - | Floating Gate Devices: Operation and Compact Modeling |
| | P. Pavan, L. Larcher and A. Marmiroli |
| | Università di Modena e Reggio Emilia, IT |
| ISBN: | 0-9767985-3-0 |
| Pages: | 412 |
| Hardcopy: | $120.00 |
| Special: | 3 CD Set — 15% off with Free Shipping |
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