Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling

Chapter 3:

WCM 2004 Invited Papers

-Technology Limits and Compact Model for SiGe Scaled FETs
 R.W. Dutton and C-H Choi
 Stanford, US
-Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects
 Z. Yu, D. Zhang and L. Tian
 Tsinghua University, CN
-Recent Enhancements of MOS Model 11
 R. van Langevelde, A.J. Scholten and D.B.M. Klaassen
 Philips Research Laboratories, NL
-Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description
 M. Miura-Mattausch, S. Hosokawa, D. Navarro, S. Matsumoto, H. Ueno, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, T. Kage, and S. Miyamoto
 Hiroshima University, JP
-The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation
 X. Xi, J. He, M. Dunga, C-H Lin, B. Heyderi, H. Wan, M. Chan, A.M. Niknejad and C. Hu
 University of California at Berkeley, US
-Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs
 X. Zhou, S.B. Chiah, K. Chandrasekaran, K.Y. Lim, L. Chan and S. Chu
 Nanyang Technological University, SG
-Modeling and Characterization of Wire Inductance for High Speed VLSI Design
 N.D. Arora and L. Song
 Cadence Design Systems, US
-R3, an Accurate JFET and 3-Terminal Diffused Resistor Model
 C. McAndrew
 Motorola, US
-Advanced MOSFET Modeling for RF IC Design
 Y. Cheng
 Skyworks Solutions, US
-RF Noise Models of MOSFETs- A Review
 S. Asgaran and M. Jamal Deen
 McMaster University, CA
-Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors
 H. Tran and M. Schroter
 University of Technology Dresden, DE
-Quasi-2D Compact Modeling for Double-Gate MOSFET
 M. Chan, T.Y. Man, J. He, X. Xi, C-H Lin, X. Lin, P.K. Ko, A.M. Niknejad and C. Hu
 Hong Kong University of Science and Technology, HK
-Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs
 Q. Chen, L. Wang, R. Murali and J.D. Meindl
 Georgia Institute of Technology, US
-Floating Gate Devices: Operation and Compact Modeling
 P. Pavan, L. Larcher and A. Marmiroli
 Universit√† di Modena e Reggio Emilia, IT
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