Authors: Y. Mahotin and R. Mickevicius
Affilation: Synopsys, Inc., United States
Pages: 211 - 214
Keywords: FB-SOI, partially deplited (PD) SOI, compact model parameter extraction, optimization.
As SOI rapidly advances to the vanguard of ULSI technology, compact model parameter extraction for SOI still relies on indirect methods. Floating body (FB) device parameter extraction is currently based on body contact (BC) devices. However, the underlying physics of these two devices is quite different and therefore, matching of their characteristics is problematic. In this work we report a novel direct method. For the first time the model parameters of deep submicron SOI have been extracted using only FB device. In addition to standard model parameters, we have been able to extract gate current, impact ionization current, GIDL current, as well as diode and BJT currents using only FB device.