Authors: D. Zhang, Z. Yu and L. Tian
Affilation: Tsinghua University, China
Pages: 191 - 194
Keywords: 2D electrostatics, 2D quantum effects, charge, current
A compact I-V model for FinFET using ballistic transport with 1D electron gas is presented. The 2D electrostatics and 2D quantum mechanical (QM) effects at the cross-section are fully taken into account, which ensures the applicability to various types of FinFETs, from double-gate (DG) to Omega FinFET or nanowire FinFET. Compared to numerical simulations and experimental data, the model correctly predicts carrier density and terminal current of decanano-scaled devices.