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 | WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 2: Poster Papers |
| | A Compact I-V Model for FinFETs Comprising Multi-Dimensional Electrostatics and Quantum Mechanical Effects | | Authors: | D. Zhang, Z. Yu and L. Tian | | Affilation: | Tsinghua University, CN | | Pages: | 191 - 194 | | Keywords: | 2D electrostatics, 2D quantum effects, charge, current | | Abstract: | A compact I-V model for FinFET using ballistic transport with 1D electron gas is presented. The 2D electrostatics and 2D quantum mechanical (QM) effects at the cross-section are fully taken into account, which ensures the applicability to various types of FinFETs, from double-gate (DG) to Omega FinFET or nanowire FinFET. Compared to numerical simulations and experimental data, the model correctly predicts carrier density and terminal current of decanano-scaled devices. |  | View paper | | ISBN: | 0-9767985-3-0 |
| Pages: | 412 |
| Hardcopy: | $120.00 |
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