Authors: K. Nehari, D. Munteanu, J.L. Autran, S. Harrison, O. Tintori and T. Skotnicki
Affilation: L2MP-CNRS, France
Pages: 179 - 182
Keywords: threshold voltage modeling, Double-Gate MOSFETs, short channel effects, quantum effects
Compact modeling of Double-Gate MOSFET incites very much interest presently, since DG is considered to be the best candidate for the integration at the end-of-roadmap. The aim of this work is to develop a short-channel quantum mechanical compact model for the threshold voltage based on the decoupled Poisson and Schrödinger equations in the silicon film. Recently, we have proposed an analytical VT model for long channel devices including QM effect and applying to both symmetric and asymmetric device. This model is enhanced here for taking into account short channel effects. The model is completely validated using a full 2-D QM numerical simulation code and is compared with experimental data extracted from DG devices fabricated using the SON process. The model is developed here in the case of a symmetric Double-Gate device, but it can be very easily adapted to any asymmetric Double-Gate device (different oxides thicknesses or gate work-functions).