Authors: Q. Chen, J-S Goo, N. Subba, X. Cai, J.X. An, T. Ly, Z-Y Wu, S. Suryagandh, C. Thuruthiyil, M. Radwin, L. Zamudio, J. Yonemura, F. Assad, M.M. Pelella and A.B. Icel
Affilation: Advanced Micro Devices, United States
Pages: 159 - 162
Keywords: SOI, hysteresis, compact modeling
Exploiting the asymmetric nature of interactions among hysteresis, “nonFET”, and DC characteristics, an a priori hysteresis modeling methodology has been proposed as an essential part of an improved model extraction flow for advanced PD SOI technologies. It has been successfully implemented on a state-of-the-art 90 nm technology demonstrating projected benefits, including minimum deviation of nonFET characteristics from hardware data, improved model extraction efficiency, improved model accuracy for hysteresis over a wide range of Vdd/T, and efficient implementation of automatic hysteresis optimization.