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 | WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 1: Invited Papers |
| | Physics and Modeling of Noise in SiGe HBT Devices and Circuits | | Authors: | G. Niu | | Affilation: | Auburn University, US | | Pages: | 105 - 110 | | Keywords: | noise parameters, SiGe HBT, cyclostationary noise, 1=f noise, phase noise | | Abstract: | This paper gives an overview of the physics and modeling of noise in SiGe HBT devices and circuits, including RF broadband noise, low-frequency noise, and oscillator phase noise. The ability to simultaneously achieve high cutoö frequency (fT ), low base resistance (rb), and high current gain (¬) using Si processing underlies the low levels of low frequency 1=f noise, RF noise and phase noise of SiGe HBTs. We will show that the phase noise corner frequency in SiGe HBT oscillators is typically much smaller than the 1=f corner frequency measured under dc biasing. |  | View paper | | ISBN: | 0-9767985-3-0 |
| Pages: | 412 |
| Hardcopy: | $120.00 |
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