Keywords: 1=f noise, cyclostationary noise, noise parameters, phase noise, SiGe HBT
This paper gives an overview of the physics and modeling of noise in SiGe HBT devices and circuits, including RF broadband noise, low-frequency noise, and oscillator phase noise. The ability to simultaneously achieve high cutoö frequency (fT ), low base resistance (rb), and high current gain (¬) using Si processing underlies the low levels of low frequency 1=f noise, RF noise and phase noise of SiGe HBTs. We will show that the phase noise corner frequency in SiGe HBT oscillators is typically much smaller than the 1=f corner frequency measured under dc biasing.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 105 - 110
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Nanoparticle Synthesis & Applications
ISBN: 0-9767985-3-0