Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling
Chapter 1: Invited Papers

Compact Modelling of High-Voltage LDMOS Devices

Authors:A.C.T. Aarts, R. van der Hout, R. van Langevelde, A.J. Scholten, M.B. Willemsen and D.B.M. Klaassen
Affilation:Philips Research Laboratories, NE
Pages:93 - 98
Keywords:LDMOS, compact modelling, high-voltage MOS, MOS Model 20, quasi-saturation
Abstract:In this paper various modelling approaches for Laterally Double-Di used MOS (LDMOS) devices are discussed. Characterisation results for the new compact LDMOS model called MOS Model 20 are presented. Measurements of the dc-current, its conductances and the capacitances obtained from Y -parameters of an LDMOS device, show that MOS Model 20 provides accurate descriptions in all regimes of operation. For future developments, the inclusion of quasi-saturation in MOS Model 20 is demonstrated. Finally, the consequence of the lateral non-uniformity of the LDMOS device for compact modelling is discussed.
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