Authors: A. Ortiz-Conde, F.J. García-Sánchez, S. Malobabic and J. Muci
Affilation: Universidad Simón Bolívar, Venezuela, Bolivarian Republic of
Pages: 63 - 68
Keywords: MOS compact modeling, symmetric DG MOSFET, undoped body MOS, intrinsic channel, drain current model
A potential-based drain current model is presented for nanoscale undoped-body symmetric double gate MOSFETs. It is based on a fully coherent physical description and consists of a single analytic equation that includes both drift and diffusion contributions. The derivation is completely rigorous and based on a procedure previously enunciated for long-channel bulk SOI MOSFETs. The resulting expression is a continuous description valid for all bias conditions, from subthreshold to strong inversion and from linear to saturation operation. The validity of the model has been ascertained by extensive comparison to exact numerical simulations. The results attest to the excellent accuracy of this formulation.