Nano Science and Technology Institute
WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling

Chapter 1:

Invited Papers

-A History of MOS Transistor Compact Modeling
 C-T Sah
 University of Florida, US
-Advanced Compact Models for MOSFETs
 J. Watts, C. McAndrew, C. Enz, C. Galup-Montoro, G. Gildenblat, C. Hu, R. van Langevelde, M. Miura-Mattausch, R. Rios and C-T Sah
 Joint Paper, UN
-Comparison of Surface Potential and Charge-based MOSFET Core Models
 C. Galup-Montoro, M. Schneider, V.C. Pahim and R. Rios
 Universidade Federal de Santa Catarina, BR
-Introduction to PSP MOSFET Model
 G. Gildenblat, X. Li, H. Wang, W. Wu, R. van Langevelde, A.J. Scholten, G.D.J. Smit and D.B.M. Klaassen
 Pennsylvania State University, US
-Unified Regional Charge-based Versus Surface-potential-based Compact Modeling Approaches
 X. Zhou, S.B. Chiah, K. Chandrasekaran, G.H. See, W.Z. Shangguan, S.M. Pandey, M. Cheng, S. Chu and L.-C. Hsia
 Nanyang Technological University, SG
-Mobility Extraction and Compact Modeling for FETs Using High-K Gate Materials
 R.W. Dutton, Y. Liu, C.-H. Choi and T.W. Chen
 Stanford University, US
-The Effects of the Gate Tunneling Current on the High Frequency Noise Parameters of MOSFETs
 J. Deen, J.C. Ranuárez and C-H. Chen
 McMaster University, CA
-Correlated Noise Modeling and Simulation
 C. McAndrew, G. Coram, A. Blaum and O. Pilloud
 Freescale Semiconductor, US
-Modeling and Characterization of High Frequency Effects in ULSI Interconnects
 N.D. Arora and L. Song
 Cadence Design Systems, US
-Compact Model of Multiple-gate SOI MOSFETs
 B. Iñiguez, H.A. Hamid, D. Jiménez and J. Roig
 Universitat Rovira i Virgili, ES
-Physics-Based, Non-Charge-Sheet Compact Modeling of Double-Gate MOSFETs
 H. Lu and Y. Taur
 University of California at San Diego, US
-Analytic Solution for the Drain Current of Undoped Symmetric Dual-Gate MOSFET
 A. Ortiz-Conde, F.J. García-Sánchez, S. Malobabic and J. Muci
 Universidad Simón Bolívar, VE
-RF-MOSFET Model Parameter Extraction with HiSIM
 M. Miura-Mattausch, N. Sadachika, M. Murakawa, S. Mimura, T. Higuchi, K. Itoh, R. Inagaki and Y. Iguchi
 Hiroshima University, JP
-Challenges in Compact Modeling for RF and Microwave Applications
 A. Niknejad, M. Dunga, B. Heydari, H. Wan, C.H. Lin, S. Emami, C. Doan, X. Xi, J. He, C. Hu
 University of California at Berkeley, US
-A Study of Figures of Merit for the High Frequency Behavior of MOSFETs in RF IC Applications
 Y. Cheng
 Siliconlinx, US
-Modeling FET Variation Within a Chip as a Function of Circuit Design and Layout Choices
 J. Watts, N. Lu, C. Bittner, S. Grundon and J. Oppold
 IBM, US
-Compact Modelling of High-Voltage LDMOS Devices
 A.C.T. Aarts, R. van der Hout, R. van Langevelde, A.J. Scholten, M.B. Willemsen and D.B.M. Klaassen
 Philips Research Laboratories, NE
-Two-/Three-Dimensional GICCR for Si/SiGe Bipolar Transistors
 M. Schröter and H. Tran
 University of Technology Dresden, DE
-Physics and Modeling of Noise in SiGe HBT Devices and Circuits
 G. Niu
 Auburn University, US
-Compact Modeling of Four-Terminal Junction Field-Effect Transistors
 J. Liou
 University of Central Florida, US
-Statistical Simulations of Oxide Leakage Current in MOS Transistor and Floating Gate Memories
 L. Larcher and P. Pavan
 Università di Modena e Reggio Emilia, IT
ISBN:0-9767985-3-0
Pages:412
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