Authors: B. Lassen, L.C. Lew Yan Voon, R. Melnik and M. Willatzen
Affilation: Worcester Polytechnic Institute, United States
Pages: 49 - 52
Keywords: semiconductor, nanostructures, V-groove, quantum wires, electronic properties, theory
Comparison between the Burt-Foreman and Luttinger-Kohn valence-band Hamiltonians have been performed for realistic V-groove GaAs/AlGaAs and InGaAs/InP quantum wires. Significant differences in band structure is only found for InGaAs/InP quantum wires.