Authors: M. Watts, V. Truskett, J. Choi, C. Mackay, I. McMackin, P. Schumaker, D. Babbs, S.V. Sreenivasan and N. Schumaker
Affilation: Molecular Imprints, Inc, United States
Pages: 508 - 509
Keywords: step and flash imprint technology, imprinting, nano-manufacturing, wafers, imprint process
The Step and Flash Imprint Lithography (S-FILTM) process is a step and repeat nano-replication technique based on UV curable low viscosity liquids. S-FIL uses field-to-field drop dispensing of the UV curable liquids for the step and repeat patterning. This approach allows for patterning of structures with widely varying pattern densities and complicated structures. Nano-manufacturing requires the features to be printed reproducibly, aligned precisely and printed with low defect density. In this paper, the latest data on the S-FIL process will be described. In addition, a brief summary of the overall status of the S-FIL process will also be presented. The presentation will specifically include: Full wafer (200 mm) residual thickness control to enable practical etching (thickness variation < 10 nm, 3 ) Field edge control compatible with 50 um kerf regions Field-to-field imprint CD control and line edge roughness Overlay alignment results Process life and defect data Molecular Imprints, Inc. (MII) has developed the ImprioTM 100, which is the first commercial step and repeat imprint lithography system with field-to-field alignment (Figure 1). Full wafer step and repeat printing performance is shown in Figure 2. The current status of overlay alignment accuracy is presented in Figure 3. Figure 4 shows the film thickness means and variation data for a full wafer. The data was obtained by at 64 locations per field (field size is 25 mm by 25 mm) over 25 fields on the wafer. Figure 5 shows the edge definition of an imprint field magnified by 1000X. Figure 6 shows process life data for printing pillars and contacts.