Piprek J., Nakamura S.
University of California, US
Keywords: built-in polarization, GaN, InGaN quantum well, light-emitting diodes, nano-photonics, wurtzite semiconductors
We here investigate the effects of built-in polarization on the properties of non-symmetric InGaN quantum wells. The impact of these nano-scale effects on the performance of blue light emitting diodes is analyzed utilizing advanced numerical simulation.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: March 7, 2004
Pages: 15 - 17
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Photonic Materials & Devices
ISBN: 0-9728422-9-2