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 | Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Chapter 3: Compact Modeling |
| | A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model | | Authors: | S.C. Wang, G.W. Huang, K.M. Chen, A.S. Peng, H.C. Tseng and T.L. Hsu | | Affilation: | National Nano Device Laboratories, TW | | Pages: | 151 - 154 | | Keywords: | MOSFET, substrate, small-signal modeling, parameter extraction | | Abstract: | In this paper, the substrate parasitic has been added into the conventional MOSFET small-signal model for RFIC applications, and an extraction approach based on the curve-fitting method proposed by S. Lee also has been developed to accurately determine the whole model parameters. The agreement between the measured and simulated S-parameters up to 40GHz proves the feasibility of this modified extraction method. | | ISBN: | 0-9728422-8-4 |
| Pages: | 519 |
| Hardcopy: | $150.00 |
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