A Trial Report: HiSIM-1.2 Parameter Extraction for 90 nm Technology
Authors:
Y. Iino
Affilation:
Silvaco Japan, JP
Pages:
147 - 150
Keywords:
HiSIM, surface potential, parameter extraction, compact model
Abstract:
This paper reports HiSIM-1.2 Spice model parameter extraction for a practical 90 nm technology devices. The extraction sequence with the measurement data will be exhibitted. The number of optimized HiSIM parameters were only 19 out of 89. And the result verified the HiSIM-1.2 model scalability down to 100 nm with several improvement points.
