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 | Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Chapter 3: Compact Modeling |
| | Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs | | Authors: | X. Zhou, S.B. Chiah, K. Chandrasekaran, K.Y. Lim, L. Chan and S. Chu | | Affilation: | Nanyang Technological University, SG | | Pages: | 74 - 79 | | Keywords: | compact model, symmetry, charge-based model, deep-submicron MOSFET, poly depletion, Xsim | | Abstract: | This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deepsubmicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source–drain symmetry, charge-based AC model fully consistent with DC without the need for C -V data, and inclusion of polydepletion effect for both DC and AC models. | | ISBN: | 0-9728422-8-4 |
| Pages: | 519 |
| Hardcopy: | $150.00 |
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