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 | Nanotech 2004 Vol. 2
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 2
Chapter 2: Nano Scale Device Modeling |
| | Sub-Threshold Electron Mobility in SOI-MESFETs | | Authors: | T. Khan, D. Vasileska and T.J. Thornton | | Affilation: | Arizona State University, US | | Pages: | 49 - 51 | | Keywords: | Schottky junction transistor, SJT, subthreshold conduction, micropower | | Abstract: | Micropower circuits use subthreshold MOSFETs that consume minimal power resulting from the combination of ultra-low drain currents (10-11 < Id < 10-5 A/µm) and small drain voltages required for saturation (Vd sat ~150-200mV). Unfortunately, sub-threshold CMOS is a slow technology, with micropower circuits limited to operating frequencies below ~ 1MHz. To achieve higher sub-threshold operating frequencies, we have proposed a Schottky Junction Transistor (SJT) [1] as an alternative to sub-threshold MOSFET devices. It adopts a MESFET architecture and exhibits higher electron mobility. The enhanced MESFET mobility leads to a corresponding increase in the cut-off frequency fT compared to a similar gate length MOSFET carrying the same amount of current | | ISBN: | 0-9728422-8-4 |
| Pages: | 519 |
| Hardcopy: | $150.00 |
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